FP50R12KT3 Infineon Technologies, FP50R12KT3 Datasheet - Page 9

• Manufacturer Part Number: FP50R12KT3
• Description: IGBT Modules N-CH 1.2KV 75A
• Manufacturer: Infineon Technologies

Specifications of FP50R12KT3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 75 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo 3
• Packages: AG-ECONO3-1
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3 Fast
• Housing: EconoPIM™ 3

Technische Information / technical information
IGBT-Module
IGBT-modules
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2- ( U,-.W
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10000
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1000
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100
80
70
60
50
40
30
20
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U
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100
W
W
W
W
FP50R12KT3
U
U
U
U
2,5
U
U
U
U
120
3,0
W
W
W
W
140
W
W
W
W
160
3,5
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1
1
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2c ( U,cW
1
1
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Vorläufige Daten
preliminary data
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3,0
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4,0