BSM100GB120DN2K Infineon Technologies, BSM100GB120DN2K Datasheet - Page 7

• Manufacturer Part Number: BSM100GB120DN2K
• Description: IGBT Modules 1200V 100A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM100GB120DN2K

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 145 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge1
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Ic (max): 100.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 100 GB 120 DN2K
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
C
ns
60
50
45
40
35
30
25
20
15
10
C
) , inductive load , T
CE
CE
5
0
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
50
50
GE
GE
100
100
= ± 15 V, R
= ± 15 V, R
j
j
= 125°C
= 125°C
150
150
G
G
= 6.8
= 6.8
A
A
tdoff
tdon
tr
tf
Eon
Eoff
I
I
C
C
250
250
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
10
ns
40
30
25
20
15
10
G
CE
CE
5
0
4
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600V, V
10
10
20
20
GE
GE
= ± 15 V, I
= ± 15 V, I
30
30
j
j
= 125°C
= 125°C
40
40
C
C
= 100 A
= 100 A
Oct-21-1997
tdoff
tdon
tr
tf
Eon
Eoff
R
R
G
G
60
60