FZ800R12KS4_B2 Infineon Technologies, FZ800R12KS4_B2 Datasheet - Page 7

• Manufacturer Part Number: FZ800R12KS4_B2
• Description: IGBT Modules N-CH 1.2KV 1.2KA
• Manufacturer: Infineon Technologies

Specifications of FZ800R12KS4_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 1200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 800.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: IHM 130 mm
• Lead Free Status / Rohs Status: Compliant

Technische Information / technical information
FZ800R12KS4_B2
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
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