FZ800R12KS4_B2 Infineon Technologies, FZ800R12KS4_B2 Datasheet - Page 7
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FZ800R12KS4_B2
Manufacturer Part Number
FZ800R12KS4_B2
Description
IGBT Modules N-CH 1.2KV 1.2KA
Manufacturer
Infineon Technologies
Datasheet
1.FZ800R12KS4_B2.pdf
(8 pages)
Specifications of FZ800R12KS4_B2
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
1200 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM130
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Ic (max)
800.0 A
Vce(sat) (typ)
3.2 V
Technology
IGBT2 Fast
Housing
IHM 130 mm
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FZ800R12KS4_B2FZ800R12KS4-B2
Manufacturer:
INFINEON
Quantity:
120
Part Number:
FZ800R12KS4_B2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
FZ800R12KS4_B2
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
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