FP15R12YT3 Infineon Technologies, FP15R12YT3 Datasheet

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FP15R12YT3

Manufacturer Part Number
FP15R12YT3
Description
IGBT Modules N-CH 1.2KV 25A
Manufacturer
Infineon Technologies
Datasheet

Specifications of FP15R12YT3

Configuration
Array 7
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
25 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EASY2
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
25A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Packages
AG-EASY2-1
Ic (max)
15.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3 Fast
Housing
EasyPIM™ 2
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FP15R12YT3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FP15R12YT3
Quantity:
101
Company:
Part Number:
FP15R12YT3
Quantity:
200
Technische Information / technical information
IGBT-Module
IGBT-modules
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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Related parts for FP15R12YT3

FP15R12YT3 Summary of contents

Page 1

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Page 2

... M" " 6< < Charakteristische Werte / characteristic values / < " 6< " >C ! < >C ! < FP15R12YT3 #$% & '() 7 & & & #$% & . '() 1g & *?, & *8 #$% & '() 1g & *?, & *8 #$% & . '() 1g & & F 5AJ *9 & *?, & #$% & '() *9 & *?, & #$% & . '() 1g & & F 5AJ *9 & *?, & #$% & '() *9 & *?, & ...

Page 3

... ") 1 >C ! < >C ! < FP15R12YT3 #$% & '() #i & & '() 7 & & & '() 1+ & *?, & #$% & '() 1+ & *?, & #$% & . '() 1+ & 8G !58 *+, & *?,8 #$% & '() *?, & @.' * & . MN68 #$% & '() *+, & *?, & * & . MN68 #$% & '() *+, & *?, & * *+, & *?, & *8 #$% & '() *+, & *8 *?, & *8 #$% & '() 1+ & *+, & *?, & X.' *8 ?32 & #$% & '() *?, & ...

Page 4

... NTC-Widerstand / NTC-thermistor Charakteristische Werte / characteristic values m < 5 < pqq pqq * < a > a FP15R12YT3 #$% & '() j & & & #$% & . '() 1g & *?, & *8 #$% & '() 1g & *?, & *8 #$% & . '() 1g & & 5AJ *9 & *?, & #$% & '() *9 & *?, & #$% & . '() 1g & & 5AJ *9 & *?, & #$% & '() *9 & ...

Page 5

... Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but guarantees no characteristics valid with the appropriate technical explanations. FP15R12YT3 M"8 & ' N68 & ...

Page 6

... U*?,W 1+ & U*?,W 1+ & U*?,W 1+ & U*?,W *+, & *+, & *+, & *+, & #$% & '() 27 #$% & . '() *?, t*v FP15R12YT3 & U*+,W 1+ & U*+,W 1+ & U*+,W 1+ & U*+,W #$% & . '() #$% & . '() #$% & . '() #$% & . '() 2,1 2,4 2,7 3,0 0,0 ...

Page 7

... X.' *8 ?3ZZ & #$% & . '() *?, & X.' *8 ?3ZZ & #$% & . '() *?, & X.' *8 ?3ZZ & #$% & . '() *?, & X.' *8 ?3ZZ & #$% & . '() 1 200 400 600 800 *+, t*v FP15R12YT3 >C ! < >C ! < >C ! < >C ! < ~=Hbf & ~=Hbf & ~=Hbf & ~=Hbf & ...

Page 8

... U W ~=Hbf & ~=Hbf & ~=Hbf & ~=Hbf / 1 0 A>v 8.SS 8S0 0,01 0,001 0,01 0 FP15R12YT3 W W " " " " < < < < ROi & ROi & ROi & ROi & & *+, & & *+, & & *+, & & *+, & G ...

Page 9

... Technische Information / technical information IGBT-Module IGBT-modules / / \ \ / / < < < < 1g & U*gW 1g & U*gW 1g & U*gW 1g & U*gW 30 #$% & '() #$% & . '() 0,0 0,5 1,0 1,5 *g t*v FP15R12YT3 m#) m m#) m & U#W & U#W & U#W & U#W 100000 10000 1000 100 2,0 2,5 3,0 0 ...

Page 10

... Technische Information / technical information IGBT-Module IGBT-modules Schaltplan / circuit diagram Gehäuseabmessungen / package outlines FP15R12YT3 10 Vorläufige Daten preliminary data ...

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