BSM400GA170DLC Infineon Technologies, BSM400GA170DLC Datasheet - Page 5

• Manufacturer Part Number: BSM400GA170DLC
• Description: IGBT Modules 1700V 400A SINGLE
• Manufacturer: Infineon Technologies

Specifications of BSM400GA170DLC

• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 800 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 3.12 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 400.0 A
• Vce(sat) (typ): 2.6 V
• Technology: IGBT2 Low Loss
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
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0
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
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0,5
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BSM 400 GA 170 DLC
Tj = 25°C
Tj = 125°C
1,0
Tj = 25°C
Tj = 125°C
8
5(8)
V
V
GE
F
1,5
9
[V]
[V]
I
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C
V
= f (V
CE
2,0
= 20V
GE
)
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I
2,5
F
= f (V
12
F
)
BSM400GA170DLC
3,0
13