FF450R12ME3 Infineon Technologies, FF450R12ME3 Datasheet

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FF450R12ME3

Manufacturer Part Number

FF450R12ME3

Description

IGBT Modules N-CH 1.2KV 600A

Manufacturer

Infineon Technologies

Datasheet

1.FF450R12ME3.pdf (8 pages)

Specifications of FF450R12ME3

Configuration

Dual

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

1.7 V

Continuous Collector Current At 25 C

600 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

2100 W

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

+/- 20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

EconoDUAL-3

Channel Type

N

Collector-emitter Voltage

1.2kV

Gate To Emitter Voltage (max)

±20V

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

125C

Operating Temperature Classification

Automotive

Ic (max)

450.0 A

Vce(sat) (typ)

1.7 V

Technology

IGBT3

Housing

EconoDUAL 3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

FF450R12ME3

Manufacturer:

SONY

Quantity:

210

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

FF450R12ME3

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

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Related parts for FF450R12ME3

FF450R12ME3 Summary of contents

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