FD800R33KL2C-K_B5 Infineon Technologies, FD800R33KL2C-K_B5 Datasheet - Page 3
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FD800R33KL2C-K_B5
Manufacturer Part Number
FD800R33KL2C-K_B5
Description
IGBT Modules N-CH 3.3KV 1.5KA
Manufacturer
Infineon Technologies
Datasheet
1.FD800R33KL2C-K_B5.pdf
(8 pages)
Specifications of FD800R33KL2C-K_B5
Configuration
Dual
Collector- Emitter Voltage Vceo Max
3300 V
Continuous Collector Current At 25 C
1500 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHV190
Ic (max)
800.0 A
Vce(sat) (typ)
3.4 V
Technology
IGBT2 Low Loss
Housing
IHV 190 mm
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FD800R33KL2C-K_B5
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Modulinduktivität: IGBT (Zweig 1+2 parallel): 20nH; Diode (Zweig 3): 25nH
stray inductance module: IGBT (arm 1+2 parallel): 20 nH; diode (arm 3): 25nH
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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