FF400R17KF6C-B2 Infineon Technologies, FF400R17KF6C-B2 Datasheet - Page 7

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FF400R17KF6C-B2

Manufacturer Part Number
FF400R17KF6C-B2
Description
IGBT Modules 1700V 400A DUAL
Manufacturer
Infineon Technologies
Datasheet

Specifications of FF400R17KF6C-B2

Configuration
Dual
Collector- Emitter Voltage Vceo Max
1700 V
Collector-emitter Saturation Voltage
2.6 V
Continuous Collector Current At 25 C
650 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
3.3 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
0,001
900
800
700
600
500
400
300
200
100
0
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Transienter Wärmewiderstand
Transient thermal impedance
0
r
r
i
i
[K/kW]
i
[K/kW]
i
[sec]
[sec]
i
200
: IGBT
: IGBT
: Diode
: Diode
IC,Modul
IC,Chip
0,01
FF 400 R 17 KF6C B2
400
600
0,003
0,003
0,1
3,64
6,7
1
800
7 (8)
V
1000
17,97
36,44
0,045
CE
0,05
2
t [sec]
[V]
1
Z
thJC
1200
R
g
= f (t)
= 3,6 Ohm, T
12,44
0,45
7,6
0,1
Zth:Diode
Zth:IGBT
3
1400
10
vj
= 125°C
vorläufige Daten
preliminary data
1600
12,42
8,78
0,95
0,75
4
1800
100
FF400R17KF6CB2

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