FD800R33KF2C Infineon Technologies, FD800R33KF2C Datasheet - Page 2

• Manufacturer Part Number: FD800R33KF2C
• Description: IGBT Modules 3300V 800A CHOPPER
• Manufacturer: Infineon Technologies

Specifications of FD800R33KF2C

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 3300 V
• Collector-emitter Saturation Voltage: 3.4 V
• Continuous Collector Current At 25 C: 1300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 9.6 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 800.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: IHV 190 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
8
1
1
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7
3
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9
9
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8
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3g * 2
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7;
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Vorläufige Daten
preliminary data
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