FZ800R17KF6C-B2 Infineon Technologies
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FZ800R17KF6C-B2
Manufacturer Part Number
FZ800R17KF6C-B2
Description
IGBT Modules 1700V 800A SINGLE
Manufacturer
Infineon Technologies
Specifications of FZ800R17KF6C-B2
Configuration
Dual Common Emitter Common Gate
Collector- Emitter Voltage Vceo Max
1700 V
Collector-emitter Saturation Voltage
2.6 V
Continuous Collector Current At 25 C
1300 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
6.6 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant