FS25R12KE3G Infineon Technologies, FS25R12KE3G Datasheet - Page 6

• Manufacturer Part Number: FS25R12KE3G
• Description: IGBT Modules N-CH 1.2KV 40A
• Manufacturer: Infineon Technologies

Specifications of FS25R12KE3G

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 40 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo 2
• Ic (max): 25.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPACK™ 2

IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
Technische Information / technical information
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0
0
5
20
10
Eon
Eoff
Erec
Eon
Eoff
Erec
40
15
FS25R12KE3 G
6 (8)
60
V
V
E
E
20
GE
GE
on
on
=±15V, R
=±15V, I
= f(I
= f (R
R
I
C
G
80
25
[A]
[Ω]
C
), E
G
C
G
) , E
= 25A, V
= 36Ω, V
off
30
100
= f(I
off
= f (R
CE
C
CE
35
), E
= 600V, T
= 600V, T
120
rec
G
DB_FS25R12KE3 _G_3.0.xls
) , E
40
= f(I
vj
vj
= 125°C
140
rec
= 125°C
C
)
45
= f (R
2002-09-03
160
50
G
)