FZ1200R12KF4 Infineon Technologies, FZ1200R12KF4 Datasheet - Page 4

• Manufacturer Part Number: FZ1200R12KF4
• Description: IGBT Modules 1200V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R12KF4

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 7.8 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Standard
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Z
[°C/W]
(th)JC
10
10
10
6
3
2
5
3
2
-1
-2
-3
10
FZ1200R12KF4
Bild/Fig. 5
Transienter innerer Wärmewiderstand (DC)
Transient thermal impedance (DC)
-3
2
4
10
-2
2
4
10
-1
2
4
10
0
t [ s ]
2
4
Diode
IGBT
10
1
i
[ A ]
F
2000
1500
1000
2500
500
0
0.5
FZ1200R12KF4
Bild/Fig. 6
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of the inverse diode (typical)
t
t
vj
vj
= 25 °C
= 125 °C
1.0
1.5
2.0
FZ 1200 R12 KF4
v
F
[ V ]
2.5
3.0