BSM25GB120DN2 Infineon Technologies, BSM25GB120DN2 Datasheet - Page 5

• Manufacturer Part Number: BSM25GB120DN2
• Description: IGBT Modules 1200V 25A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM25GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 38 A
• Gate-emitter Leakage Current: 180 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge1
• Ic (max): 25.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 25 GB 120 DN2
Typ. output characteristics
I
Typ. transfer characteristics
I
C
parameter: t
C
parameter: t
I
I
C
C
= f (V
= f (V
50
40
35
30
25
20
15
10
50
40
35
30
25
20
15
10
A
A
5
0
5
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
50
40
35
30
25
20
15
10
A
5
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
2
j
= 125 °C
3
Oct-20-1997
V
V
CE
5