DDB2U30N08VR Infineon Technologies, DDB2U30N08VR Datasheet - Page 3

• Manufacturer Part Number: DDB2U30N08VR
• Description: IGBT Modules N-CH 600V 25A
• Manufacturer: Infineon Technologies

Specifications of DDB2U30N08VR

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 25 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY750
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 25A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Packages: AG-EASY750-1
• Vrrm (max): 800.0 V
• Id: 48
• Rthjc (max): 1.3 K/W
• Housing: EasyBRIDGE 750
• Lead Free Status / Rohs Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
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