BSM100GAL120DLCK Infineon Technologies, BSM100GAL120DLCK Datasheet - Page 2

• Manufacturer Part Number: BSM100GAL120DLCK
• Description: IGBT Modules 1200V 100A CHOPPER
• Manufacturer: Infineon Technologies

Specifications of BSM100GAL120DLCK

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 205 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 830 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 100.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
Reverse-Diode / reverse-diode
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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