BSM100GB120DN2 Infineon Technologies, BSM100GB120DN2 Datasheet
Home Discrete Semiconductor Products IGBTs - Single BSM100GB120DN2
Manufacturer Part Number
BSM100GB120DN2
Description
IGBT Modules 1200V 100A DUAL
Manufacturer
Infineon Technologies
Specifications of BSM100GB120DN2
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
150 A
Gate-emitter Leakage Current
200 nA
Power Dissipation
800 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Half Bridge2
Ic (max)
100.0 A
Vce(sat) (typ)
2.5 V
Technology
IGBT2 Standard
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
BSM100GB120DN2
Manufacturer:
Infineon Technologies
Part Number:
BSM100GB120DN2
Part Number:
BSM100GB120DN2
Part Number:
BSM100GB120DN2
Manufacturer:
INFINEON/英飞凌
Part Number:
BSM100GB120DN2
Part Number:
BSM100GB120DN2 B
Part Number:
BSM100GB120DN2 E3238
Manufacturer:
INFINEON/英飞凌
Part Number:
BSM100GB120DN2 K
Manufacturer:
EUPEC/Infineon
Part Number:
BSM100GB120DN2 K
Manufacturer:
INFINEON/英飞凌
Part Number:
BSM100GB120DN2 K
Part Number:
BSM100GB120DN2 K
IGBT Power Module
Semiconductor Group
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 100 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 150A
CE
I
C
1
Package
HALF-BRIDGE 2
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
BSM 100 GB 120 DN2
55 / 150 / 56
-55 ... + 150
Values
Ordering Code
C67076-A2107-A70
+ 150
± 20
1200
1200
2500
150
100
300
200
800
F
0.16
20
11
0.3
Mar-29-1996
Unit
V
A
W
°C
K/W
Vac
mm
-
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BSM100GB120DN2 Summary of contents
IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current ...
Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 100 ...
Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 6.8 Gon Rise time V = 600 ...
Power dissipation tot C parameter: T 150 °C j 900 W P 700 tot 600 500 400 300 200 100 Collector current ...
Typ. output characteristics parameter µ ° 200 A 17V 15V 160 I 13V C 11V 140 9V 7V 120 100 ...
Typ. gate charge Gate parameter 100 A C puls 600 100 200 300 Reverse biased safe operating ...
Typ. switching time inductive load , T = 125° par 600 ± ...
Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 200 A 160 I F 140 120 T =125°C j 100 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal ...
Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group Circuit Diagram 9 BSM 100 GB 120 DN2 Mar-29-1996 ...
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