T1989N18TOF Infineon Technologies, T1989N18TOF Datasheet - Page 8

• Manufacturer Part Number: T1989N18TOF
• Description: Discrete Semiconductor Modules 1800V 1990A
• Manufacturer: Infineon Technologies
• Type: Discrete Semiconductor Moduler

Specifications of T1989N18TOF

• Mounting Style: Through Hole
• Output Current: 4200 A
• Reverse Voltage: 1800 V
• Package / Case: T1989
• Gate Trigger Current: 250 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MA2-BE / 15 Aug 1995, K.-A. Rüther
N
Phase Control Thyristor
100000
100
0,1
10000
10
1000
1
10
Netz-Thyristor
1
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
Steuercharakteristik v
Gate characteristic v
Sperrverzögerungsladung / Recovered charge Q
Datenblatt / Data sheet
a - 20W / 10ms
Parameter: Durchlaßstrom / On-state current i
100
T
vj
= T
Steuerkennlinie
vjmax
A 122/95
Zündverzug
G
, v
G
= f (i
T1989N
= f (i
R
b - 40W / 1ms
≤ 0,5 V
G
G
) with triggering area for V
i
) mit Zündbereichen für V
G
[mA]
RRM
10
, V
RM
c - 60W / 0,5ms
= 0,8 V
RRM
1000
r
TM
= f(di/dt)
D
D
= 12 V
= 12 V
-di/dt [A/µs]
Seite/page
a
GM
= f (t
b
g
) :
i
TM
c
= 4000A
10000
2000A
1000A
8/10
500A
200A
100A
100