T1989N18TOF Infineon Technologies, T1989N18TOF Datasheet - Page 5
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T1989N18TOF
Manufacturer Part Number
T1989N18TOF
Description
Discrete Semiconductor Modules 1800V 1990A
Manufacturer
Infineon Technologies
Type
Discrete Semiconductor Moduler
Datasheet
1.T1989N18TOF.pdf
(10 pages)
Specifications of T1989N18TOF
Mounting Style
Through Hole
Output Current
4200 A
Reverse Voltage
1800 V
Package / Case
T1989
Gate Trigger Current
250 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
T1989N18TOF
Quantity:
13
MA2-BE / 15 Aug 1995, K.-A. Rüther
N
Phase Control Thyristor
Kühlung / Cooling
kathodenseitig
cathode-sided
anodenseitig
anode-sided
Netz-Thyristor
Erhöhung des Z
two-sided
12.000
10.000
beidseitig
Rise of Z
8.000
6.000
4.000
2.000
0
0,9
th DC
for sinewave and rectangular current with different current conduction angles Θ
th DC
1,1
Grenzdurchlaßkennlinie / Limiting on-state characteristic i
∆Z
∆Z
∆Z
∆Z
∆Z
∆Z
[°C/W]
[°C/W]
[°C/W]
[°C/W]
[°C/W]
[°C/W]
bei Sinus und Rechteckströmen mit unterschiedlichen Stromflusswinkeln Θ
th Θ rec
th Θ rec
th Θ rec
th Θ sin
th Θ sin
th Θ sin
Datenblatt / Data sheet
1,3
Durchlasskennlinie
Θ = 180°
0,00111
0,00085
0,00184
0,00124
0,00277
0,00243
Z
Z
th Θ rec
th Θ sin
A 122/95
1,5
∆Z
T1989N
= Z
= Z
th Θ rec
T
V
vj
T
= T
th DC
th DC
[V]
Θ = 120°
0,00180
0,00119
0,00306
0,00180
0,00419
0,00317
/ ∆Z
vj max
1,7
+ Z
+ Z
th Θ sin
th Θ rec
th Θ sin
1,9
0,00230
0,00163
0,00396
0,00253
0,00512
0,00403
Θ = 90°
T
vj
= T
T
2,1
= f(v
vj max
T
0,00297
0,00227
0,00528
0,00368
0,00626
0,00517
Θ = 60°
)
Seite/page
2,3
0,00398
0,00333
0,00762
0,00610
0,00782
0,00684
Θ = 30°
2,5
5/10