TDB6HK95N16LOF Infineon Technologies, TDB6HK95N16LOF Datasheet - Page 2

• Manufacturer Part Number: TDB6HK95N16LOF
• Description: Discrete Semiconductor Modules 1600V 75A HF-CNTL
• Manufacturer: Infineon Technologies
• Type: Phase Control Thyristor Moduler

Specifications of TDB6HK95N16LOF

• Mounting Style: Through Hole
• Output Current: 75 A
• Reverse Voltage: 1600 V
• Typical Delay Time: 190 uS
• Package / Case: TDB6
• Gate Trigger Current: 8 mA
• Packages: AG-ISOPACK-2
• Vdrm/ Vrrm (v): 1,600.0 V
• Ifsm (max): 620.0 A
• Housing: IsoPACK™
• Configuration: Half controlled Bridge
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Zündverzug
gate controlled delay time
Freiwerdezeit
circuit commutated turn-off time
Isolations-Prüfspannung
insulation test voltage
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Si-Elemente mit Lötkontakt, glaspassiviert
Si-pellets with soldered contact, glass-passivated
Innere Isolation
internal insulation
Anzugsdrehmoment für mechanische Befestigung
mounting torque
Anzugsdrehmoment für elektrische Anschlüsse
terminal connection torque
Gewicht
weight
Kriechstrecke
creepage distance
Schwingfestigkeit
vibration resistance
Kühlkörper / heatsinks : KM 11; KM 14; KM 17; KM 33
BIP PPE4
Technische Information / Technical Information
Phase Control Thyristor Module
Netz-Thyristor-Modu
rev. 2
19. Okt 05
TT B6C 95 N 16 (ISOPACK)
DIN IEC 747-6
T
T
v
d
7. Kennbuchstabe / 7th letter O
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
pro Modul / per module,
pro Element / per chip,
pro Modul / per module, DC
pro Element / per chip, DC
pro Modul / per module
pro Element / per chip
Toleranz / tolerance ±15%
Toleranz / tolerance +5% / -10%
f = 50Hz
RM
vj
vj
VD
= 25°C, i
= T
/dt = 20V/µs, -di
= 100V, V
vj max
, i
GM
TM
DM
= 0,6A, di
= 50A
= 0,67 V
T
/dt = 10A/µs
G
/dt = 0,6A/µs
DRM
= 120°rect
= 120°rect
t
t
V
R
R
T
T
T
M1
M2
G
gd
q
vj max
c op
stg
ISOL
thJC
thCK
Seite/page 2(6)
typ.
max.
max. 0,137
max. 0,820
max. 0,108
max. 0,650
max. 0,033
max. 0,200
N
- 40...+125
- 40...+130
typ.
Seite 3
page 3
Al
12,5
190
125
300
2
1,2
3,0
3,6
O
50
6
6
3
µs
µs
kV
kV
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
Nm
Nm
g
mm
m/s²
B6