PZU4.7B2,135 NXP Semiconductors, PZU4.7B2,135 Datasheet - Page 4

• Manufacturer Part Number: PZU4.7B2,135
• Description: DIODE ZENER 310MW 4.7V SOT323
• Manufacturer: NXP Semiconductors

Specifications of PZU4.7B2,135

• Voltage - Zener (nom) (vz): 4.7V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 1V
• Power - Max: 310mW
• Impedance (max) (zzt): 80 Ohm
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Operating Temperature: -65°C ~ 150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -

NXP Semiconductors
Table 8.
T
[1]
[2]
PZUXB_SER_2
Product data sheet
PZU
xxx
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
j
= 25
f = 1 MHz; V
t
p
= 100 μs; square wave; T
°
Sel Working
B
B
B1 2.5
B2 2.65
B
B1 2.80
B2 2.95
B
B1 3.10
B2 3.25
B
B1 3.40
B2 3.55
B
B1 3.70
B2 3.87
B
B1 4.01
B2 4.15
B3 4.28
B
B1 4.42
B2 4.55
B3 4.69
B
B1 4.84
B2 4.98
B3 5.14
B
B1 5.31
B2 5.49
B3 5.67
C unless otherwise specified
Characteristics per type; PZU2.4B to PZU5.6B3
voltage
V
I
Min
2.3
2.5
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
Z
Z
= 5 mA
R
(V);
= 0 V
Max
2.6
2.9
2.75
2.9
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.48
4.21
4.34
4.48
4.90
4.61
4.75
4.90
5.37
5.04
5.20
5.37
5.92
5.55
5.73
5.92
j
Maximum differential
resistance
r
I
1000
1000
1000
1000
1000
1000
1000
800
250
100
Z
= 25 °C prior to surge
dif
= 0.5 mA I
(Ω)
100
100
95
95
90
90
90
80
60
40
Z
= 5 mA
Rev. 02 — 15 November 2009
50
20
10
5
5
3
3
2
Reverse
current
I
Max
2
1
R
(μA)
V
1
1
1
1
1
1
1
1
1.5
2.5
R
(V) Typ
Temperature
coefficient
S
I
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
0.3
1.9
Z
Single Zener diodes in a SOD323F package
Z
= 5 mA
(mV/K);
450
440
425
410
390
370
350
325
300
275
Diode
capacitance
C
Max
d
(pF)
PZUxB series
[1]
Non-repetitive peak
reverse current
I
Max
8
8
8
8
8
8
8
8
5.5
5.5
ZSM
© NXP B.V. 2009. All rights reserved.
(A)
[2]
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