1N4448-TAP Vishay, 1N4448-TAP Datasheet - Page 3

Diodes (General Purpose, Power, Switching) Vr/75V Io/150mA

1N4448-TAP

Manufacturer Part Number
1N4448-TAP
Description
Diodes (General Purpose, Power, Switching) Vr/75V Io/150mA
Manufacturer
Vishay
Datasheet

Specifications of 1N4448-TAP

Product
Switching Diodes
Peak Reverse Voltage
75 V
Forward Continuous Current
300 mA
Max Surge Current
2 A
Configuration
Single
Recovery Time
8 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.025 uA
Maximum Power Dissipation
500 mW
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
DO-35
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Package Dimensions
Document Number 81858
Rev. 1.1, 17-Aug-10
Document no.: 6.560-5004.02-4
Rev. 6 - Date: 29. January 2007
94 9366
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
26 (1.024) min.
For technical questions within your region, please contact one of the following:
in millimeters (inches):
3.9 (0.154) max.
Cathode identification
DO-35
DiodesEurope@vishay.com
26 (1.024) min.
Vishay Semiconductors
1N4448
www.vishay.com
3

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