1N4448-TAP Vishay, 1N4448-TAP Datasheet - Page 2

• Manufacturer Part Number: 1N4448-TAP
• Description: Diodes (General Purpose, Power, Switching) Vr/75V Io/150mA
• Manufacturer: Vishay

Specifications of 1N4448-TAP

• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 300 mA
• Max Surge Current: 2 A
• Configuration: Single
• Recovery Time: 8 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.025 uA
• Maximum Power Dissipation: 500 mW
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Package / Case: DO-35
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1N4448
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
amb
amb
Figure 1. Forward Voltage vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9169
94 9171
Figure 2. Forward Current vs. Forward Voltage
1000
Parameter
100
0.1
1.2
1.0
0.8
0.6
0.4
0.2
10
1
0
- 30
0
1N4448
T
0.4
j
0
- Junction Temperature (°C)
V
F
[e-mail], [e-mail],
- Forward Voltage (V)
0.8
For technical questions within your region, please contact one of the following:
30
I
F
Scattering Limit
V
0.1 mA
= 100 mA
R
1.2
60
I
= 0, f = 1 MHz, V
F
i
I
R
V
R
V
= I
I
T = 25 °C
HF
F
R
= 0.1 x I
= 100 µA, t
j
R
= 10 mA, V
= 20 V, T
Test condition
= 2 V, f = 100 MHz
90
= 10 mA, i
1.6
I
F
t
V
V
p
I
F
= 100 mA
10 mA
R
R
= 0.3 ms
1 m A
= 5 mA
R
= 20 V
= 75 V
, R
120
2.0
j
p
= 150 °C
/T = 0.01,
L
R
R
= 100 Ω
HF
= 6 V,
= 1 mA
= 50 mV
Symbol
V
C
V
V
(BR)
I
I
I
η
t
t
R
R
R
rr
rr
F
F
D
r
94 9098
1000
Figure 3. Reverse Current vs. Reverse Voltage
100
10
1
[e-mail]
1
T
Scattering Limit
j
Min.
620
100
= 25 °C
45
V
R
- Reverse Voltage (V)
Typ.
10
Document Number 81858
1000
Max.
720
25
50
5
4
8
4
Rev. 1.1, 17-Aug-10
100
Unit
mV
mV
nA
µA
µA
pF
ns
ns
%
V