NSBC123JPDXV6T5 ON Semiconductor, NSBC123JPDXV6T5 Datasheet - Page 4

• Manufacturer Part Number: NSBC123JPDXV6T5
• Description: Digital Transistors 100mA Complementary
• Manufacturer: ON Semiconductor

Specifications of NSBC123JPDXV6T5

• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 357 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
(T
ON CHARACTERISTICS (Note 3)
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Input Resistor
Resistor Ratio
A
= 25°C unless otherwise noted, common for Q
Characteristic
300
250
200
150
100
50
0
−50
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC143TPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC143TPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC114EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC113EPDXV6T1G
NSBC114EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123JPDXV6T1G
NSBC123JPDXV6T1G
T
1
A
and Q
, AMBIENT TEMPERATURE (°C)
0
Figure 1. Derating Curve
R
http://onsemi.com
2
qJA
, − minus sign for Q
= 490°C/W
50
4
Symbol
R1/R2
R1
1
(PNP) omitted)
100
0.055
0.038
15.4
32.9
15.4
1.54
0.17
0.38
Min
7.0
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.8
0.8
0.8
0.8
0.8
−
−
150
0.047
0.21
0.47
Typ
4.7
1.0
2.2
4.7
4.7
2.2
1.0
1.0
1.0
1.0
1.0
1.0
0.1
10
22
47
10
10
22
−
−
0.185
0.056
Max
28.6
61.1
28.6
2.86
0.25
0.56
6.1
1.3
2.9
6.1
6.1
1.2
1.2
1.2
1.2
1.2
1.2
13
13
13
−
−
Unit
k W