NSB1010XV5T5 ON Semiconductor, NSB1010XV5T5 Datasheet - Page 5

• Manufacturer Part Number: NSB1010XV5T5
• Description: Digital Transistors 100mA Complementary
• Manufacturer: ON Semiconductor

Specifications of NSB1010XV5T5

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 10 KOhms at NPN, 4.7 KOhms at PNP
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-553-5
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 357 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5
1
G
−X−
A
2
4
3
D
0.08 (0.003)
−Y−
5 PL
B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
0.0531
X
1.35
Y
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
5−LEAD PACKAGE
C
http://onsemi.com
CASE 463B−01
0.0197
0.0118
0.5
SOT−553
ISSUE A
0.3
0.0394
S
J
K
1.0
5
0.0197
0.5
SCALE 20:1
0.0177
0.45
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
ANSI Y14.5M, 1982.
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
DIM
A
B
C
D
G
K
J
S
MILLIMETERS
MIN
1.50
1.10
0.50
0.17
0.08
0.10
1.50
0.50 BSC
MAX
1.70
1.30
0.60
0.27
0.18
0.30
1.70
0.059
0.043
0.020
0.007
0.003
0.004
0.059
MIN
0.020 BSC
INCHES
0.067
0.051
0.024
0.011
0.007
0.012
0.067
MAX