NSB1010XV5T5 ON Semiconductor, NSB1010XV5T5 Datasheet

NSB1010XV5T5

Manufacturer Part Number

NSB1010XV5T5

Description

Digital Transistors 100mA Complementary

Manufacturer

ON Semiconductor

Datasheet

1.NSB1010XV5T5G.pdf (6 pages)

Specifications of NSB1010XV5T5

Configuration

Dual

Transistor Polarity

NPN/PNP

Typical Input Resistor

10 KOhms at NPN, 4.7 KOhms at PNP

Typical Resistor Ratio

Mounting Style

SMD/SMT

Package / Case

SOT-553-5

Collector- Emitter Voltage Vceo Max

50 V

Continuous Collector Current

0.1 A

Peak Dc Collector Current

100 mA

Power Dissipation

357 mW

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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NSB1010XV5T5

Dual Common

Base−Collector Bias

Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSB1010XV5T5, two

complementary BRT devices are housed in the SOT−553 package

which is ideal for low power surface mount applications where board

space is at a premium.

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ Minimum Pad.

MAXIMUM RATINGS

and Q

 Semiconductor Components Industries, LLC, 2005

January, 2005 − Rev. 0

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation

Thermal Resistance

Total Device Dissipation

Thermal Resistance

Junction and Storage Temperature

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Available in 8 mm, 7 inch Tape and Reel

This device is manufactured with a Pb−Free external lead finish only.

(Both Junctions Heated)

, − minus sign for Q

(One Junction Heated)

Derate above 25°C

Junction-to-Ambient

Derate above 25°C

Junction-to-Ambient

Characteristic

= 25°C

Rating

(PNP) omitted)

= 25°C unless otherwise noted, common for Q

Preferred Device

Symbol

, T

CBO

CEO

qJA

stg

357 (Note 1)

350 (Note 1)

500 (Note 1)

250 (Note 1)

2.9 (Note 1)

4.0 (Note 1)

−55 to +150

Value

Max

100

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

NSB1010XV5T5

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CASE 463B

Device

SOT−553

US = Specific Device Code

ORDERING INFORMATION

= Date Code

http://onsemi.com

(Pb−Free)

SOT−553

Package

Publication Order Number:

MARKING

DIAGRAM

8000/Tape & Reel

NSB1010XV5/D

US D

2 mm pitch

Shipping

†

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NSB1010XV5T5 Summary of contents

Page 1

... The BRT eliminates these individual components by integrating them into a single device. In the NSB1010XV5T5, two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space premium. • ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (V = − Collector-Emitter Cutoff Current (V = − Emitter-Base Cutoff Current (V = −6 Collector-Base Breakdown Voltage (I = ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR −25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 5

... SOLDERING FOOTPRINT* 1.35 0.0531 0.0197 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com SOT−553 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982 CONTROLLING DIMENSION: MILLIMETERS 3 ...

Page 6

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

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