PUMD6 T/R NXP Semiconductors, PUMD6 T/R Datasheet - Page 4

• Manufacturer Part Number: PUMD6 T/R
• Description: Digital Transistors TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors

Specifications of PUMD6 T/R

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 4.7 KOhms
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PUMD6,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
CHARACTERISTICS
T
2004 Apr 07
Per transistor
R
Per device
R
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
R1
C
SYMBOL
SYMBOL
amb
CBO
CEO
EBO
FE
CEsat
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
th(j-a)
th(j-a)
c
= 25 °C; unless otherwise specified.
thermal resistance from junction to
ambient
thermal resistance from junction to
ambient
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
SOT363
SOT666
SOT363
SOT666
TR1 (NPN)
TR2 (PNP)
PARAMETER
PARAMETER
note 1
note 1
V
V
V
V
V
I
I
C
E
CB
CE
CE
EB
CE
= I
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0; V
4
CONDITIONS
CONDITIONS
C
C
B
CB
E
B
B
= 0
= 0.25 mA
= 1 mA
= 0
= 0
= 0; T
= 10 V; f = 1 MHz
j
= 150 °C
−
−
−
−
200
−
3.3
−
−
MIN.
VALUE
PEMD6; PUMD6
625
625
416
416
−
−
−
−
−
−
4.7
−
−
TYP.
Product data sheet
100
1
50
100
−
100
6.1
2.5
3
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
nA
mV
kΩ
pF
pF
UNIT