PUMH14 T/R NXP Semiconductors, PUMH14 T/R Datasheet - Page 4

Digital Transistors TRNS DOUBL RET TAPE7

PUMH14 T/R

Manufacturer Part Number
PUMH14 T/R
Description
Digital Transistors TRNS DOUBL RET TAPE7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMH14 T/R

Configuration
Dual
Transistor Polarity
NPN/NPN
Typical Input Resistor
47 KOhms
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PUMH14,115
NXP Semiconductors
7. Characteristics
PEMH14_PUMH14_3
Product data sheet
Fig 1.
h
(1) T
(2) T
(3) T
FE
10
10
3
2
10
V
DC current gain as a function of collector
current; typical values
−1
CE
amb
amb
amb
= 5 V
= 100 °C
= 25 °C
= −40 °C
1
Table 8.
T
(1)
(2)
(3)
Symbol
Per transistor
I
I
I
h
V
R1
C
CBO
CEO
EBO
amb
FE
CEsat
c
= 25
°
C unless otherwise specified.
10
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
I
C
006aaa182
(mA)
Rev. 03 — 15 November 2009
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open
10
2
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CB
= 150 °C
= 10 mA; I
Fig 2.
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 10 V; I
V
(mV)
CEsat
(1) T
(2) T
(3) T
10
10
10
3
2
C
1
C
I
Collector-emitter saturation voltage as a
function of collector current; typical values
C
amb
amb
amb
E
B
B
B
E
/I
= 0 A
= 1 mA
B
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= i
= 20
= 100 °C
= 25 °C
= −40 °C
e
= 0 A;
PEMH14; PUMH14
Min
-
-
-
-
100
-
33
-
10
(2)
47
Typ
-
-
-
-
-
-
-
(1)
(3)
I
C
(mA)
© NXP B.V. 2009. All rights reserved.
006aaa183
Max
100
1
50
100
-
150
61
2.5
10
2
Unit
nA
μA
μA
nA
mV
pF
4 of 8

Related parts for PUMH14 T/R