PDTC123ET T/R NXP Semiconductors, PDTC123ET T/R Datasheet - Page 2

• Manufacturer Part Number: PDTC123ET T/R
• Description: Digital Transistors TRANS RET TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PDTC123ET T/R

• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-3
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PDTC123ET,215

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 06
PDTC123EE
PDTC123EEF
PDTC123EK
PDTC123EM
PDTC123ES
PDTC123ET
PDTC123EU
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
−
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TC123E
*26
*48
G1
5A
6A
48
(1)
(1)
PDTC123E series
PDTA123EE
PDTA123EEF
PDTA123EK
PDTA123EM
PDTA123ES
PDTA123ET
PDTA123EU
−
−
2.2
2.2
PNP COMPLEMENT
TYP.
Product data sheet
50
100
−
−
MAX.
V
mA
kΩ
kΩ
UNIT