PUMH7 T/R NXP Semiconductors, PUMH7 T/R Datasheet - Page 4

Digital Transistors TRNS DOUBL RET TAPE7

PUMH7 T/R

Manufacturer Part Number
PUMH7 T/R
Description
Digital Transistors TRNS DOUBL RET TAPE7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMH7 T/R

Configuration
Dual
Transistor Polarity
NPN/NPN
Typical Input Resistor
4.7 KOhms
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PUMH7,115
NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2003 Oct 02
Per transistor
R
Per device
R
Per transistor
I
I
I
h
V
R1
C
SYMBOL
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
NPN/NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
th j-a
th j-a
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
I
V
C
CB
CE
CE
EB
CE
CB
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 10 V; I
4
CONDITIONS
C
C
B
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
E
B
B
E
amb
amb
= 0
= 0.25 mA
= 1 mA
= 0
= 0
= 0; T
= i
CONDITIONS
≤ 25 °C
≤ 25 °C
e
= 0; f = 1 MHz
j
= 150 °C
200
3.3
MIN.
VALUE
PEMH7; PUMH7
625
625
416
416
330
4.7
TYP.
Product data sheet
100
1
50
100
100
6.1
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
nA
mV
pF
UNIT

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