PUMH13 T/R NXP Semiconductors, PUMH13 T/R Datasheet - Page 4

Digital Transistors TRNS DOUBL RET TAPE7

PUMH13 T/R

Manufacturer Part Number
PUMH13 T/R
Description
Digital Transistors TRNS DOUBL RET TAPE7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMH13 T/R

Configuration
Dual
Transistor Polarity
NPN/NPN
Typical Input Resistor
4.7 KOhms
Typical Resistor Ratio
0.1
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PUMH13,115
NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2004 Apr 14
Per transistor
R
Per device
R
Per transistor
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
NPN/NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
th(j-a)
th(j-a)
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
f = 1 MHz
C
CB
CE
CE
EB
CE
CE
CE
CB
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 10 V; I
= 5 V; I
= 0.3 V; I
4
CONDITIONS
C
B
C
C
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
E
B
B
E
= 0.25 mA
= 0 A
= 10 mA
= 100 μA
C
amb
amb
= 0 A
= 0 A
= 0 A; T
= i
= 5 mA
CONDITIONS
e
≤ 25 °C
≤ 25 °C
= 0 A;
j
= 150 °C
100
1.3
3.3
8
MIN.
PEMH13; PUMH13
VALUE
625
625
416
416
0.6
0.9
4.7
10
TYP.
Product data sheet
100
1
50
170
100
0.5
6.1
12
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
pF
UNIT

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