BC517 T/R NXP Semiconductors, BC517 T/R Datasheet - Page 3

• Manufacturer Part Number: BC517 T/R
• Description: Darlington Transistors TRANS DARLINGTON TAPE RADIAL
• Manufacturer: NXP Semiconductors

Specifications of BC517 T/R

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BC517,116

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Nov 05
handbook, full pagewidth
R
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BEon
th(j-a)
NPN Darlington transistor
V
80000
60000
40000
20000
CE
h FE
= 25 C unless otherwise specified.
= 2 V.
0
10
1
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
PARAMETER
PARAMETER
1
Fig.2 DC current gain; typical values.
V
V
V
I
I
V
V
f = 100 MHz
C
C
CB
EB
CE
CE
CE
= 100 mA; I
= 100 mA; I
= 10 V; I
= 30 V; I
= 2 V; I
= 5 V; I
= 5 V; I
3
10
CONDITIONS
C
C
C
note 1
C
E
= 20 mA; see Fig.2 30000
= 30 mA;
= 10 mA
B
B
= 0 A
= 0 A
CONDITIONS
= 0.1 mA
= 0.1 mA
10
2
MIN.
VALUE
200
I C (mA)
220
TYP.
Product specification
100
100
1
1.5
1.4
MAX.
MGD837
BC517
UNIT
K/W
10
3
nA
nA
V
V
V
MHz
UNIT