BZB84-C9V1,215 NXP Semiconductors, BZB84-C9V1,215 Datasheet - Page 7

• Manufacturer Part Number: BZB84-C9V1,215
• Description: DIODE ZENER DL 9.1V 300MW SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BZB84-C9V1,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Voltage - Zener (nom) (vz): 9.1V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 500nA @ 6V
• Configuration: 1 Pair Common Anode
• Power - Max: 300mW
• Impedance (max) (zzt): 15 Ohm
• Tolerance: ±5%
• Mounting Type: Surface Mount
• Zener Voltage: 9.05 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 5.4 mV / K
• Power Dissipation: 300 mW
• Maximum Reverse Leakage Current: 0.5 uA
• Maximum Zener Impedance: 15 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061694215

NXP Semiconductors
Table 10.
T
[1]
[2]
BZB84_SER_3
Product data sheet
BZB84-
Cxxx
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
j
= 25 C unless otherwise specified.
f = 1 MHz; V
t
p
= 100 s; square wave; T
Working voltage
V
I
Min
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
Z
Characteristics per type; BZB84-C2V4 to BZB84-C24
Z
= 5 mA
(V)
R
= 0 V
Max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
j
= 25 C prior to surge
Differential
resistance
r
I
Max
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
Z
dif
= 1 mA I
( )
Max
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Z
= 5 mA
Rev. 03 — 9 June 2009
Reverse current
I
Max
50
20
10
5
5
3
3
3
2
1
3
2
1
0.70
0.50
0.20
0.10
0.10
0.10
0.05
0.05
0.05
0.05
0.05
0.05
R
( A)
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14.0
15.4
16.8
R
(V)
Temperature
coefficient
S
I
Min
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Z
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
2.7
2.0
Z
= 5 mA
(mV/K)
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Diode
capacitance
C
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
BZB84 series
d
(pF)
[1]
Dual Zener diodes
© NXP B.V. 2009. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
ZSM
(A)
[2]
7 of 14