BZB84-C12,215 NXP Semiconductors, BZB84-C12,215 Datasheet - Page 8
![DIODE ZENER DL 12V 300MW SOT-23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BZB84-C12,215
Manufacturer Part Number
BZB84-C12,215
Description
DIODE ZENER DL 12V 300MW SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BZB84-C10215.pdf
(14 pages)
Specifications of BZB84-C12,215
Voltage - Zener (nom) (vz)
12V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
100nA @ 8V
Configuration
1 Pair Common Anode
Power - Max
300mW
Impedance (max) (zzt)
25 Ohm
Tolerance
±5%
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934061697215
NXP Semiconductors
Table 11.
T
[1]
[2]
BZB84_SER_3
Product data sheet
BZB84-
Cxxx
27
30
33
36
39
43
47
51
56
62
68
75
j
Fig 1.
= 25 C unless otherwise specified.
f = 1 MHz; V
t
p
P
(W)
ZSM
(1) T
(2) T
= 100 s; square wave; T
10
10
10
1
10
3
2
Per diode: Non-repetitive peak reverse power
dissipation as a function of pulse duration;
maximum values
Working voltage
V
I
Min
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
Z
j
j
1
Characteristics per type; BZB84-C27 to BZB84-C75
Z
= 25 C (prior to surge)
= 150 C (prior to surge)
= 2 mA
(V)
R
= 0 V
Max
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
j
= 25 C prior to surge
1
Differential
resistance
r
I
Max
300
300
325
350
350
375
375
400
425
450
475
500
Z
dif
(1)
(2)
= 0.5 mA I
( )
t
p
(ms)
Max
80
80
80
90
130
150
170
180
200
215
240
255
Z
mbg801
= 2 mA
10
Rev. 03 — 9 June 2009
Reverse current
I
Max
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
R
( A)
Fig 2.
V
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
R
(mA)
I
F
(V)
300
200
100
0
0.6
T
Per diode: Forward current as a function of
forward voltage; typical values
j
= 25 C
Temperature
coefficient
S
I
Min
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
Z
Z
= 2 mA
(mV/K)
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
0.8
Diode
capacitance
C
Max
50
50
45
45
45
40
40
40
40
35
35
35
BZB84 series
d
(pF)
[1]
Dual Zener diodes
© NXP B.V. 2009. All rights reserved.
V
Non-repetitive
peak reverse
current
I
Max
1.00
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.30
0.25
0.20
ZSM
mbg781
F
(V)
(A)
1
[2]
8 of 14