TGA8334-SCC TriQuint, TGA8334-SCC Datasheet
TGA8334-SCC
Specifications of TGA8334-SCC
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TGA8334-SCC Summary of contents
Page 1
... Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. The TGA8334-SCC is supplied in chip form and is readily assembled using automated equipment. TriQuint Semiconductor Texas Phone: (972)994 8465 ...
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... TYPICAL OUTPUT POWER P 1dB TYPICAL SMALL-SIGNAL POWER GAIN TYPICAL RETURN LOSS TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet April 25, 2003 TGA8334-SCC Fax: (972)994 8504 Web: www.triquint.com 2 ...
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... See the application note included in this data sheet that references tests on samples. TriQuint Semiconductor Texas Phone: (972)994 8465 TABLE I MAXIMUM RATINGS PARAMETER * (unless otherwise noted directly affects the device MTTF. For maximum life Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet April 25, 2003 TGA8334-SCC VALUE 9V I DSS - -29.1mA - –10V 7W 27dBm 0 150 ...
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... TriQuint Semiconductor Texas Phone: (972)994 8465 TABLE II DC PROBE TESTS (100 ° ° TEST CONDITIONS 6/ MIN STD 630 STD 300 STD 2.3 STD 2.3 STD 8 STD 8 and V , respectively Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet April 25, 2003 TGA8334-SCC LIMITS UNITS MAX 1170 mA mS 600 V 4.1 4 ...
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... TABLE III RF SPECIFICATIONS (T = 25°C + 5° 1.0V DSS G2 MEASUREMENT CONDITIONS MIN 4.0 5 7.4 6.0 Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet April 25, 2003 TGA8334-SCC VALUE UNITS TYP MAX 8.0 dB 8.0 dB ± dBm 25 dBm 14 dB 16.5 dB 16.5 dB 1.6:1 1.7:1 1.1:1 2.0:1 1 ...
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... BS source voltage (V as BVGS; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet April 25, 2003 TGA8334-SCC Test Conditions ) is swept from 0 voltage for I is recorded as VDSP. DSS is swept between 0 recorded as IDS1 ...
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... 50 CTRL D DSS Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet April 25, 2003 TGA8334-SCC S S GAIN 12 22 ANG(° ANG(°) (dB) 42 0.36 -170 6.7 65 0.35 171 6.4 81 0.34 159 6.5 80 0.33 150 6 ...
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... THERMAL INFORMATION The rmal res is ta nce (channel to bac ks ide ) EQUIVALENT SCHEMATIC TriQuint Semiconductor Texas Phone: (972)994 8465 ETER = Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet April 25, 2003 TGA8334-SCC TES T C ONDITION NOM UNIT = 50 18.7 °C ...
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... ASSEMBLY DIAGRAM GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet DUT BIAS TEE Fax: (972)994 8504 Web: www.triquint.com April 25, 2003 TGA8334-SCC RF OUTPUT 9 ...
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... MECHANICAL DRAWING GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Product Data Sheet April 25, 2003 TGA8334-SCC Fax: (972)994 8504 Web: www.triquint.com 10 ...
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... Product Application Note Recommended Maximum Input Power for TGA8334-SCC MMIC Background: TriQuint Semiconductor Texas has conducted tests to determine the maximum input power that can be applied to MESFET MMICs. In many applications, devices may be subjected to higher input powers than the recommended normal operating conditions understood that applications at greater than recommended input power may lead to degradation of device performance ...
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... An acceptable operating condition for input power is defined as a change of <10 change of <1dB in gain Table 1 illustrates that the TGA8334 devices are capable of handling 27dBm input signals for extended periods with only small degradation to RF and DC performance parameters. The mean value for catastrophic failure is near 39dBm ...