VUB116-16NO1 IXYS, VUB116-16NO1 Datasheet - Page 6

• Manufacturer Part Number: VUB116-16NO1
• Description: RECT BRIDGE 3PH 1600V 116A E2
• Manufacturer: IXYS

Specifications of VUB116-16NO1

• Voltage - Peak Reverse (max): 1600V
• Current - Dc Forward (if): 116A
• Diode Type: Three Phase - IGBT with Diode
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: E2
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature Classification: Automotive
• Vrrm, Rect, (v): 1600
• Idav, Rec, (a): 116
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 67
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 27
• Trr, Fast Diode, (ns): 40
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
[mJ]
[K/W]
I
E
Z
C
off
thJC
120
100
10
10
10
10
10
10
80
60
40
20
0
8
6
4
2
0
1
0
-1
-2
-3
-4
10
0
Fig. 12 Typ. transient thermal impedance
Fig. 7 Typ. output characteristics
Fig. 10 Typ. turn off energy and switching
-5
V
V
R
T
E
CE
GE
VJ
G
off
20
= 22 Ω
= 600 V
= ±15 V
= 125°C
1
10
T
VJ
-4
times versus collector current
single pulse
= 25°C
2
V
40
CE
10
-3
[V]
3
T
V
I
t [s]
C
VJ
10
GE
60
= 125°C
[A]
-2
= 15 V
4
10
80
5
-1
[A]
I
10
F
0
100
70
60
50
40
30
20
10
diode
0
IGBT
t
0
d(off)
t
Fig. 8 Typ. forward characteristics
f
10
1
800
600
400
200
0
T
VJ
of free wheeling diode
[ns]
1
t
= 100°C
V
150°C
F
[Ω]
R
[V]
[mJ]
10000
E
1000
off
2
100
12
10
8
6
4
2
0
T
Fig. 13 Typ. thermistor resistance vs. temperature
0
0
Fig. 11 Typ. turn off energy and switching
VJ
= 25°C
V
V
I
T
E
C
VJ
CE
GE
3
off
= 600 V
= ±15 V
= 50 A
= 125°C
25
20
times versus gate resistor
V
[V]
50
40
GE
20
15
10
5
0
T [°C]
0
Fig. 9 Typ. turn on gate charge
R
75
60
G
VUB 116-16NO1
[Ω]
100
100
80
200
Q
G
125
100
V
I
[nC]
C
300
t
CE
t
d(off)
f
= 600 V
= 50 A
150
120
400
1200
1000
800
600
400
200
0
20101007a
500
[ns]
6 - 6
t