VUB116-16NO1 IXYS, VUB116-16NO1 Datasheet - Page 2

• Manufacturer Part Number: VUB116-16NO1
• Description: RECT BRIDGE 3PH 1600V 116A E2
• Manufacturer: IXYS

Specifications of VUB116-16NO1

• Voltage - Peak Reverse (max): 1600V
• Current - Dc Forward (if): 116A
• Diode Type: Three Phase - IGBT with Diode
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: E2
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature Classification: Automotive
• Vrrm, Rect, (v): 1600
• Idav, Rec, (a): 116
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 67
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 27
• Trr, Fast Diode, (ns): 40
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Symbol
V
V
V
I
I
P
V
V
I
C
t
t
E
E
I
V
t
(SCSOA)
RBSOA
R
R
Symbol
V
I
I
I
P
V
r
V
I
I
t
R
R
IGBT
C25
C80
CES
d(on)
d(off)
CM
SC
Fast Recovery Diode
FAV
FRMS
FSM
R
RM
rr
F
GES
GEM
GE(th)
CES
tot
CE(sat)
ies
on
off
CEK
thJC
thCH
RRM
tot
F0
F
thJC
thCH
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
input capacitance
turn-on delay time
turn-off delay time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
reverse bias safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Definitions
max. repetitive reverse voltage
average forward current
rms forward current
max. surge forward current
total power dissipation
threshold voltage
slope resistance
forward voltage
reverse current
reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
DC
DC
I
I
V
V
V
inductive load
V
V
RBSOA; V
clamped inductive load;
V
R
V
R
Conditions
rect.; d = 0.5
rect.; d = 0.5
t = 10 ms
for power loss calculation only
I
V
I
I
C
C
F
F
F
CE
CE
CE
CE
GE
CE
CE
G
G
R
= 100 A; V
= 8 mA
= 30 A
= 50 A; V
= 1 A; V
= V
= 22 W; non-repetitive
= 22 W; L = 100 µH; clamped inductive load
= V
= 0.8·V
= 25 V; V
= 720 V; I
= ±15 V; R
= 720 V; V
= 1200 V; V
RRM
CES
; V
R
GE
CES
R
= 30 V; di
GE
GE
GE
= ±15 V; R
= 100 V; di
C
; V
GE
G
= 0 V
= 50 A
= 15 V
= 0 V; f = 1 MHz
GE
= 22 W; L = 100 µH
GE
= ±15 V;
= ±15 V;
= 0 V
F
/dt = -200 A/µs
G
F
/dt = -100 A/µs
= 22 W; L = 100 µH
T
VJ
= 25°C to 150°C
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
VJ
C
VJ
VJ
VJ
VJ
= 25°C
= 80°C
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 150°C
= 80°C
= 80°C
= 45°C
= 25°C
= 150°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
VUB 116-16NO1
T
C
= 25°C unless otherwise stated
min.
min.
-20
-30
4.5
< V
CES
0.33
Ratings
typ.
100
-L
Ratings
typ.
150
680
3.8
5.5
0.1
40
S
6
4
1
·d
I
/dt
max.
1200
max.
1200
6.45
0.33
2.76
0.25
+20
+30
380
100
200
130
3.5
0.1
0.5
1.3
0.9
95
67
10
27
38
16
11
20101007a
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Unit
Unit
K/W
K/W
K/W
K/W
mW
mA
mA
mA
mA
mJ
mJ
nF
ns
ns
µs
ns
W
W
V
V
V
A
A
V
V
A
V
A
V
A
A
A
V
V
A