4N25-X009T Vishay, 4N25-X009T Datasheet - Page 5

• Manufacturer Part Number: 4N25-X009T
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR>20%
• Manufacturer: Vishay

Specifications of 4N25-X009T

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.5 V
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 50 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Forward Current: 60mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP SMD
• Collector Current (dc) (max): 100mA
• Power Dissipation: 150mW
• Collector-emitter Saturation Voltage: 0.5V
• Pin Count: 6
• Mounting: Surface Mount
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors
www.vishay.com
5
Fig. 11 - Normalized h
Fig. 9 - Normalized Photocurrent vs. I
i4n25_10
i4n25_09
i4n25_11
0.01
0.8
1.2
1.0
0.6
0.4
1.5
1.0
0.5
0.0
Fig. 10 - Normalized Non-Saturated h
0.
10
1
1
0.1
1
1
70 °C
Normalized to:
I
T
25 °C
B
V
- 20 °C
Normalized to:
I
A
Base Current and Temperature
F
= 20 µA, V
CE
= 25 °C
= 10 mA, T
- 20 °C
= 0.4 V
50 °C
Ib - Base Current (µA)
Ib - Base Current (µA)
I
F
FE
- LED Current (mA)
10
10
1
CE
vs. Base Current and Temperature
A
= 10 V,
25 °C
= 25 °C
V
Normalized to:
CE
T
A
70 °C
= 10 V, I
= 25 °C
Nib, T
Nib, T
Nib, T
Nib, T
For technical questions, contact: [e-mail]
100
100
10
F
b
A
A
A
A
= 20 µA
= - 20 °C
= 20 °C
= 50 °C
= 70 °C
and Temperature
Optocoupler, Phototransistor Output,
FE
1000
1000
100
vs.
with Base Connection
Fig. 12 - Propagation Delay vs. Collector Load Resistor
i4n25_13
i4n25_12
1000
100
10
1
V
I
I
i4n25_14
F
F
0.1
O
= 10 mA
V
I
F
t
Fig. 14 - Switching Schematic
t
CC
PHL
PLH
R
= 10 mA, T
Fig. 13 - Switching Timing
L
= 5.0 V, V
- Collector Load Resistor (kΩ)
F = 10 kHz
DF = 50 %
t
D
1
t
PHL
A
th
t
= 25 °C
R
= 1.5 V
t
PLH
V
CC
10
= 5.0 V
Document Number: 81864
t
S
R
L
V
Rev. 1.0, 11-Mar-08
TH
V
t
= 1.5 V
O
F
100
2.5
2.0
1.5
1.0