4N25-X009T Vishay, 4N25-X009T Datasheet - Page 2

• Manufacturer Part Number: 4N25-X009T
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR>20%
• Manufacturer: Vishay

Specifications of 4N25-X009T

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.5 V
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 50 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Forward Current: 60mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP SMD
• Collector Current (dc) (max): 100mA
• Power Dissipation: 150mW
• Collector-emitter Saturation Voltage: 0.5V
• Pin Count: 6
• Mounting: Surface Mount
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes
(1)
(2)
Document Number: 81864
Rev. 1.0, 11-Mar-08
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
Creepage
Clearance
Isolation thickness between emitter and
detector
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector base breakdown voltage
Collector emitter breakdown voltage
Emitter collector breakdown voltage
I
I
Collector emitter capacitance
CEO
CBO
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to wave profile for soldering conditions for through hole devices.
amb
(dark)
(dark)
= 25 °C, unless otherwise specified.
(2)
(2)
(2)
(2)
(2)
(2)
For technical questions, contact: [e-mail]
(2)
(2)
Optocoupler, Phototransistor Output,
V
CE
TEST CONDITION
DIN IEC 112/VDE0303, part 1
= 10 V, (base open)
V
(emitter open)
4N25-X000/4N26-X000/4N27-X000/4N28-X000
V
distance to seating plane
I
I
I
IO
V
I
V
IO
max.10 s dip soldering:
C
C
E
F
V
CB
R
V
= 500 V, T
= 100 µA
= 1.0 mA
= 100 µA
TEST CONDITION
= 50 mA
R
= 500 V, T
CE
(1)
= 3.0 V
with Base Connection
= 10 V,
= 0 V
(1)
= 0
t ≤ 1.0 ms
≥ 1.5 mm
t ≤ 10 µs
amb
amb
= 100 °C
= 25 °C
PART
4N25
4N26
4N27
4N28
SYMBOL
BV
BV
BV
C
SYMBOL
C
V
I
R
CBO
CEO
ECO
CE
O
F
V
V
T
P
P
V
I
T
R
R
T
FSM
V
CEO
EBO
amb
I
I
I
T
diss
diss
ISO
C
C
stg
sld
F
IO
IO
R
j
MIN.
70
30
7
Vishay Semiconductors
- 55 to + 150
- 55 to + 100
VALUE
5300
≥ 7.0
≥ 7.0
≥ 0.4
10
10
100
100
150
175
100
260
TYP.
2.5
60
70
50
1.3
0.1
2.0
6.0
6
7
25
10
5
5
5
12
11
MAX.
100
100
1.5
50
50
50
20
www.vishay.com
UNIT
V
mW
mW
mm
mm
mm
mA
mA
mA
°C
°C
°C
°C
RMS
V
A
V
V
Ω
Ω
UNIT
µA
pF
nA
nA
nA
nA
nA
pF
V
V
V
V
2