LB11920-E SANYO, LB11920-E Datasheet - Page 2

• Manufacturer Part Number: LB11920-E
• Description: IC MTR DVR 3-PHASE DIP28H
• Manufacturer: SANYO

Specifications of LB11920-E

• Applications: DC Motor Driver, Brushless (BLDC), 3 Phase
• Number Of Outputs: 1
• Voltage - Load: 9.5 V ~ 30 V
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -20°C ~ 80°C
• Mounting Type: Through Hole
• Package / Case: 28-DIP (0.550", 12.7mm) Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Other names: 869-1227

Allowable Operating Conditions at Ta = 25°C
Electrical Characteristics at Ta = 25°C, VM = RF = 27V, V CC = 5V
Note : * This parameter is a design target value and is not measured.
Supply voltage range 1
Supply voltage range 2
HP pin applied voltage
HP pin output current
Supply current 1
Supply current 2
Output block
Output saturation voltage 1
Output saturation voltage 2
Output saturation voltage 3
Output leakage current
Output delay time 1
Output delay time 2
Lower diode forward 1
Lower diode forward 2
Lower diode forward 3
Upper diode forward 1
Upper diode forward 2
Upper diode forward 3
Hall Amplifier
Input bias current
Common-mode input voltage range 1
Common-mode input voltage range 2
Hall input sensitivity
Hysteresis width
Input voltage low → high
Input voltage high → low
PWM oscillator
Output H level voltage
Output L level voltage
External C charge current
Oscillator frequency
Amplitude
CSD circuit
Operating voltage
External C charge current
Operating time
HP pin
Output low level voltage
Output leakage current
Thermal shutdown operation
Thermal shutdown operating
temperature
Hysteresis width
Current limiter circuit (RF pin)
Limiter voltage
Parameter
Parameter
VM
V CC
VHP
IHP
IV CC -1
IV CC -2
V O sat1
V O sat2
V O sat3
I O leak
td1
td2
VD2-1
VD2-2
VD2-3
IHB
ΔV IN
VSLH
VSHL
V OH (PWM)
V OL (PWM)
ICHG(PWM)
f (PWM)
V OH (CSD)
ICHG (CSD)
T (CSD)
V OL (HP)
Ileak(HP)
TTSD
ΔTSD
VRF
VD1-1
VD1-2
VD1-3
VICM1
VICM2
V (PWM)
Symbol
Symbol
V CC pin
V CC pin at stop mode
I O = 1.0A, V O (sink) + V O (source)
I O = 2.0A, V O (sink) + V O (source)
I O = 3.0A, V O (sink) + V O (source)
PWMIN “H” → “L”
PWMIN “L” → “H”
at differential input
VPWM = 2.1V
C = 1000pF
VCSD = 0V
C = 10μF, Design target value*
IHP = 2mA
VHP = 30V
ID = -1.0A
ID = -2.0A
ID = -3.0A
ID = 1.0A
ID = 2.0A
ID = 3.0A
Hall device used
For input one-side bias (Hall IC application)
Design target value* (junction temperature)
Design target value* (junction temperature)
LB11920
Conditions
Conditions
min
2.75
15.8
0.45
150
-25
-60
-15
0.5
1.0
1.6
3.6
50
20
-2
0
5
Ratings
Ratings
typ
1.25
-0.1
180
-15
-45
-11
2.0
1.7
2.0
2.4
1.8
1.1
1.3
1.5
1.3
2.0
2.7
3.0
1.2
1.8
3.9
3.5
0.1
0.5
30
15
20
45
9
Continued on next page.
4.5 to 5.5
9.5 to 30
V CC -2.0
0 to 32
max
0 to 3
V CC
3.25
24.2
0.55
100
2.4
2.9
3.5
2.5
3.6
1.3
-30
2.1
3.0
1.5
1.9
2.3
1.7
2.7
3.7
4.2
0.4
13
50
25
10
-5
-7
No.7229-2/10
mVp-p
Vp-p
Unit
Unit
kHz
mA
mA
mA
mV
mV
mV
μA
μA
μA
μA
μA
μs
μs
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
s