PDTA144ET,235 NXP Semiconductors, PDTA144ET,235 Datasheet - Page 11

• Manufacturer Part Number: PDTA144ET,235
• Description: TRANS PNP W/RES 50V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTA144ET,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 47 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V
• Peak Dc Collector Current: - 100 mA
• Power Dissipation: 150 mW
• Emitter- Base Voltage Vebo: - 10 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5936-2; PDTA144ET,235

NXP Semiconductors
2004 Aug 05
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
11
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
PDTA144E series
L p
A
Q
c
X
Product data sheet
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23