SI5441DC-T1-E3 Vishay, SI5441DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5441DC-T1-E3
• Description: MOSFET P-CH D-S 20V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5441DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 3.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71055
S10-0210-Rev. E, 25-Jan-10
0.20
0.15
0.10
0.05
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 3.9 A
On-Resistance vs. Drain Current
0.2
= 10 V
4
V
3
SD
Q
g
V
- Source-to-Drain Voltage (V)
GS
I
- Total Gate Charge (nC)
0.4
D
Gate Charge
- Drain Current (A)
= 2.5 V
8
T
0.6
6
J
= 150 °C
12
0.8
V
V
9
T
GS
GS
16
J
= 25 °C
1.0
= 3.6 V
= 4.5 V
20
12
1.2
1800
1500
1200
0.20
0.15
0.10
0.05
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
rss
D
GS
= 3.9 A
= 4.5 V
C
1
4
iss
V
T
V
DS
0
C
J
GS
- Junction Temperature (°C)
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
25
2
8
50
Vishay Siliconix
I
D
= 3.9 A
12
3
75
Si5441DC
www.vishay.com
100
16
4
125
150
20
5
3