BPX 81-4 OSRAM Opto Semiconductors Inc, BPX 81-4 Datasheet - Page 5

• Manufacturer Part Number: BPX 81-4
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 81-4

• Maximum Power Dissipation: 90 mW
• Maximum Dark Current: 50 nA
• Fall Time: 8 us
• Maximum Operating Temperature: + 80 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Transparent
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 50nA
• Light Current: 2.9mA
• Power Dissipation: 90mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 36deg
• Operating Temp Range: -40C to 80C
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0043S004

Relative Spectral Sensitivity
S
Photocurrent
I
Directional Characteristics
S
2007-03-30
PCE
Srel
rel
rel
100
=
90
80
70
60
50
40
30
20
10
=
%
/I
0
400
PCE25
f
f
(λ)
(ϕ)
500
o
=
600
f
(T
700
A
),
V
800
CE
lambda
= 5 V
900 1000 1100
nm
Photocurrent
I
Collector-Emitter Capacitance
C
PCE
C
CE
ce
pF
=
=
8
7
6
5
4
3
2
1
0
1E-03
f
f
(
(E
V
CE
e
1E-02
),
),
V
f
CE
1E-01
= 1 MHz,
= 5 V
5
1E+00
E
1E+01
V
ce
= 0
V
1E+02
Total Power Dissipation
P
Dark Current
I
Dark Current
I
CEO
CEO
tot
I
I
CEO
CE O
10000
1000
nA
0.01
0.01
=
nA
100
0.1
0.1
10
10
=
=
1
1
f
-25
0
f
f
(T
(
(
V
T
A
5
A
)
CE
),
0
),
V
10
E
CE
= 0
25
15
= 20 V,
20
50
25
E
T
BPX 81
V
A
= 0
75
CE
30
°C
V
35
100