BPX 81-4 OSRAM Opto Semiconductors Inc, BPX 81-4 Datasheet - Page 4

• Manufacturer Part Number: BPX 81-4
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 81-4

• Maximum Power Dissipation: 90 mW
• Maximum Dark Current: 50 nA
• Fall Time: 8 us
• Maximum Operating Temperature: + 80 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Transparent
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 50nA
• Light Current: 2.9mA
• Power Dissipation: 90mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 36deg
• Operating Temp Range: -40C to 80C
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0043S004

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Fotostrom, λ = 950 nm
Photocurrent
E
E
V
Anstiegszeit/Abfallzeit
Rise and fall time
I
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
E
1)
1)
2007-03-30
C
C
e
v
CE
e
= 1 mA,
=
I
I
= 1000 Ix, Normlicht/standard light A,
= 0.5 mW/cm
= 0.5 mW/cm
PCEmin
PCEmin
= 5 V
I
PCEmin
ist der minimale Fotostrom der jeweiligen Gruppe.
is the min. photocurrent of the specified group.
1)
V
CC
× 0.3
= 5 V,
2
2
,
V
CE
R
= 5 V
L
= 1 kΩ
Symbol
Symbol
I
I
t
V
r
PCE
PCE
,
CEsat
t
f
4
-2
0.25…0.50
1.2
5.5
150
-3
0.40…0.80
1.9
6
150
Value
Wert
-4
≥ 0.63
2.9
8
150
BPX 81
Einheit
Unit
mA
mA
μs
mV