BPW 34 BS-Z OSRAM Opto Semiconductors Inc, BPW 34 BS-Z Datasheet - Page 4

• Manufacturer Part Number: BPW 34 BS-Z
• Description: Photodiodes PHOTODIODE, Blue SENSITIVE, SMT
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPW 34 BS-Z

• Photodiode Material: Silicon
• Peak Wavelength: 850 nm
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 25 ns
• Maximum Fall Time: 25 ns
• Package / Case: DIL-SMT-2
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.2A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Rise Time: 25ns
• Fall Time: 25ns
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: DIL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2625

Relative Spectral Sensitivity
S
Dark Current
I
Directional Characteristics
S
2007-04-03
R
rel
rel
S
=
rel
=
Ι
=
100
R
4000
3000
2000
1000
f
50
60
70
80
90
100
80
60
40
20
f
pA
f
%
(
0
0
400
V
(λ)
(ϕ)
0
R
),
1.0
E
40
600
= 0
5
0.8
800
10
30
0.6
1000
15
20
OHF01001
λ
OHF00080
V
nm
V
0.4
R
1200
20
10
ϕ
1.0
0.8
0.6
0.4
0.2
0
0
0
Photocurrent
Open-Circuit Voltage
Capacitance
C
C
Ι
=
P
100
10
pF
80
70
60
50
40
30
20
10
20
10
10
10
10
μ
f
0
10
A
-1
10
3
2
1
0
(
V
-2
0
R
),
40
10
f
10
= 1 MHz,
-1
1
60
I
P
10
10
=
4
0
V
Ι
2
O
P
f
80
(
E
E
10
v
V
10
),
= 0
1
100
O
3
V
OHF00081
V
OHF01066
E
R
=
V
OHF01402
lx
V
R
f
10
= 5 V
10
(
120
2
E
10
10
10
10
10
mV
4
v
4
3
2
1
0
)
V
O
Total Power Dissipation
P
Dark Current
I
R
tot
P
=
Ι
tot
R
=
BPW 34 B, BPW 34 B
10
f
10
10
10
10
mW
160
140
120
100
nA
80
60
40
20
f
(
-1
0
3
2
1
0
T
0
0
(
T
A
),
A
)
V
20
20
R
= 5 V,
40
40
E
60
60
= 0
80 ˚C 100
80 ˚C 100
OHF00958
OHF00082
T
T
A
A