BPW 34 BS-Z OSRAM Opto Semiconductors Inc, BPW 34 BS-Z Datasheet - Page 3

• Manufacturer Part Number: BPW 34 BS-Z
• Description: Photodiodes PHOTODIODE, Blue SENSITIVE, SMT
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPW 34 BS-Z

• Photodiode Material: Silicon
• Peak Wavelength: 850 nm
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 25 ns
• Maximum Fall Time: 25 ns
• Package / Case: DIL-SMT-2
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.2A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Rise Time: 25ns
• Fall Time: 25ns
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: DIL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2625

Kennwerte (
Characteristics (
Bezeichnung
Parameter
Kurzschlussstrom
Short-circuit current
E
Anstiegs- und Abfallzeit des Fotostroms
Rise and fall time of the photocurrent
R
Durchlassspannung,
Forward voltage
Kapazität,
Capacitance
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von
Temperature coefficient of
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
Nachweisgrenze,
Detection limit
2007-04-03
e
L
R
= 0.5 mW/cm
= 50 Ω;
= 10 V, λ = 400 nm
V
V
R
R
T
= 0 V,
= 5 V; λ = 850 nm;
A
= 25 °C, Normlicht A,
2
, λ = 400 nm
T
V
A
R
f
= 25 °C, standard light A,
= 10 V, λ = 400 nm
I
= 1 MHz,
F
= 100 mA,
V
I
V
I
SC
SC
O
O
E
I
= 0
p
E
= 800 μA
= 0
T
= 2856 K)
T
= 2856 K) (cont’d)
3
Symbol
Symbol
I
t
V
C
TC
TC
NEP
D*
r,
SC
F
0
t
f
V
I
Wert
Value
7.4 (≥ 5.4)
25
1.3
72
– 2.6
0.18
1.3 × 10
2.1 × 10
BPW 34 B, BPW 34 BS
– 13
12
Einheit
Unit
μA
ns
V
pF
mV/K
%/K
----------- -
cm
------------------------- -
W
Hz
×
W
Hz