SFH 3410-3/4-Z OSRAM Opto Semiconductors Inc, SFH 3410-3/4-Z Datasheet - Page 2

• Manufacturer Part Number: SFH 3410-3/4-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR (ALS) SMT SMART DIL
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of SFH 3410-3/4-Z

• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SMT
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Emitter-collector Voltage (max): 500mV
• Collector-emitter Voltage: 5.5V
• Collector Current (dc) (max): 20mA
• Collector-emitter Sat Volt (max): 0.1V
• Dark Current (max): 3nA
• Peak Wavelength: 570nm
• Half-intensity Angle: 120deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2655

Grenzwerte (
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Kollektor-Emitterspannung
Collector-emitter voltage
Kollektorstrom
Collector current
Emitter-Kollektorspannung
Emitter-collector voltage
Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
2009-12-17
CE
= 10% von
= 10% of
= 5 V
V
S
CE
max
T
S
T
A
max
= 0 V,
A
= 25 °C)
= 25
f
°
C)
= 1 MHz,
E
= 0
Symbol
Symbol
T
V
I
V
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
C
CEO
2
op
Smax
CE
EC
CE
×
×
;
B
W
T
stg
Wert
Value
– 40 … + 100
5.5
20
0.5
Wert
Value
570
350 … 940
0.29
0.75 × 0.75
± 60
4
3 (< 50)
Einheit
Unit
°C
V
mA
V
Einheit
Unit
nm
nm
mm
mm × mm
Grad.
deg.
pF
nA
2
SFH 3410