SFH 3410 -1/2 OSRAM Opto Semiconductors Inc, SFH 3410 -1/2 Datasheet

SFH 3410 -1/2

Manufacturer Part Number

SFH 3410 -1/2

Description

Manufacturer

OSRAM Opto Semiconductors Inc

Datasheet

1.SFH_3410_-12.pdf (7 pages)

Specifications of SFH 3410 -1/2

Phototransistor Type

Phototransistor

Polarity

NPN

Number Of Elements

Emitter-collector Voltage (max)

500mV

Collector-emitter Voltage

5.5V

Collector Current (dc) (max)

20mA

Collector-emitter Sat Volt (max)

0.1V

Dark Current (max)

3nA

Light Current

6.3/10uA

Peak Wavelength

570nm

Half-intensity Angle

120deg

Operating Temp Range

-40C to 100C

Operating Temperature Classification

Industrial

Mounting

Surface Mount

Pin Count

Package Type

SMT

Lead Free Status / Rohs Status

Compliant

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NPN-Si-Fototransistor mit V

Silicon NPN Phototransistor with V

Lead (Pb) Free Product - RoHS Compliant

SFH 3410

Wesentliche Merkmale

• Speziell geeignet für Anwendungen im Bereich

• Angepaßt an die Augenempfindlichkeit (

• SMT-Bauform ohne Basisanschluß

Anwendungen

• Umgebungslicht-Detektor

• Beleuchtungsmesser

• Dimmungssensor für Hintergrundbeleuchtung

• „Messen/Steuern/Regeln“

Typ

Type

SFH 3410

SFH 3410-1/2

SFH 3410-2/3

SFH 3410-3/4

2009-12-17

von 350 nm bis 940 nm

Bestellnummer

Ordering Code

Q65110A1211

Q65110A2653

Q65110A2654

Q65110A2655

Charakteristik

Fotostrom

Photocurrent

Ipce (

>3.2

3.2…10

5…16

8…25

)

Characteristics

Features

• Especially suitable for applications from

• Adapted to human eye sensitivity (

• SMT package without base connection

Applications

• Ambient light detector

• Exposure meter for daylight and artificial light

• Sensor for Backlight-Dimming

• For control and drive circuits

350 nm to 940 nm

= 20 lx, Standard light A,

= 5 V

)

Related parts for SFH 3410 -1/2

SFH 3410 -1/2 Summary of contents

Page 1

NPN-Si-Fototransistor mit V Silicon NPN Phototransistor with V Lead (Pb) Free Product - RoHS Compliant SFH 3410 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 940 nm • Angepaßt an die Augenempfindlichkeit ( • SMT-Bauform ...

Page 2

T Grenzwerte ( = Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Emitter-Kollektorspannung Emitter-collector voltage = 25 °C) Kennwerte ( T A Characteristics Bezeichnung Parameter Wellenlänge ...

Page 3

Bezeichnung Parameter Fotostrom Photocurrent lx, Normlicht/standard light Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage × 0. PCEmin ist der minimale Fotostrom ...

Page 4

Relative Spectral Sensitivity λ rel OHF04376 100 % S rel 400 500 600 700 800 900 nm 1100 λ Collector-Emitter Current ...

Page 5

Maßzeichnung Package Outlines 0.8 (0.031) 0.6 (0.024) Collector Emitter 1.1 (0.043) 0.9 (0.035) 2.1 (0.083) 1.9 (0.075) Maß (inch) / Dimensions in mm (inch). 2009-12-17 0.8 (0.031) 0.4 (0.016) (not connected) 0.5 (0.020) 0.3 (0.012) 0.1 (0.004) 0.0 ...

Page 6

Lötbedingungen Soldering Conditions Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering 300 ˚C 255 ˚C 250 T 240 ˚C 217 ˚C 200 150 100 Ramp K/s (max) 25 ˚ Empfohlenes ...

Page 7

Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due ...

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