SFH 313 FA-2/3 OSRAM Opto Semiconductors Inc, SFH 313 FA-2/3 Datasheet - Page 3
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SFH 313 FA-2/3
Manufacturer Part Number
SFH 313 FA-2/3
Description
Photodetector Transistors PHOTOTRANSISTOR
Manufacturer
OSRAM Opto Semiconductors Inc
Type
IR Chipr
Datasheet
1.SFH_313_FA-23.pdf
(7 pages)
Specifications of SFH 313 FA-2/3
Maximum Power Dissipation
200 mW
Maximum Dark Current
200 nA
Collector- Emitter Voltage Vceo Max
70 V
Fall Time
10 us, 12 us
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Rise Time
10 us, 12 us
Package / Case
T-1 3/4
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Emitter-collector Voltage (max)
7V
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.15V
Dark Current (max)
200nA
Light Current
8000/12500uA
Power Dissipation
200mW
Peak Wavelength
870nm
Half-intensity Angle
20deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P3597
Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessungen der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
2007-03-30
CE
= 10% von
= 10% of
= 20 V,
V
S
CE
E
max
T
S
= 0
A
max
= 5 V,
= 25 °C, λ = 950 nm)
f
= 1 MHz,
E
= 0
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
CEO
S max
CE
×
×
3
B
W
SFH 313
850
460 … 1080
0.55
1 × 1
± 10
10
3 (≤ 200)
Value
Wert
SFH 313, SFH 313 FA
SFH 313 FA
870
740 … 1080
0.55
1 × 1
± 10
10
3 (≤ 200)
Einheit
Unit
nm
nm
mm
mm × mm
Grad
deg.
pF
nA
2