PT12-21B/TR8 Everlight Electronics CO., LTD, PT12-21B/TR8 Datasheet - Page 9

Photodetector Transistors Infrared Phototransistor

PT12-21B/TR8

Manufacturer Part Number
PT12-21B/TR8
Description
Photodetector Transistors Infrared Phototransistor
Manufacturer
Everlight Electronics CO., LTD
Datasheet

Specifications of PT12-21B/TR8

Maximum Power Dissipation
75 mW
Collector- Emitter Voltage Vceo Max
30 V
Collector-emitter Breakdown Voltage
30 V
Collector-emitter Saturation Voltage
0.4 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Product
Phototransistor
Rise Time
15 us
Wavelength
940 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Package Dimensions
Taping Dimensions
Unit:mm
Everlight Electronics Co., Ltd.
Device No:DTT-012-079
http:\\www.everlight.com
Prepared date:07-20-2005
Emitter
Collector
Rev 2
Prepared by:Jaine Tsai
PT12-21B/TR8
Page: 9 of 10

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