PT12-21B/TR8 Everlight Electronics CO., LTD, PT12-21B/TR8 Datasheet - Page 3

• Manufacturer Part Number: PT12-21B/TR8
• Description: Photodetector Transistors Infrared Phototransistor
• Manufacturer: Everlight Electronics CO., LTD

Specifications of PT12-21B/TR8

• Maximum Power Dissipation: 75 mW
• Collector- Emitter Voltage Vceo Max: 30 V
• Collector-emitter Breakdown Voltage: 30 V
• Collector-emitter Saturation Voltage: 0.4 V
• Fall Time: 15 us
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Product: Phototransistor
• Rise Time: 15 us
• Wavelength: 940 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electro-Optical Characteristics (Ta=25℃)
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Collector Dark Current
On State Collector Current
Rise Time
Fall Time
Everlight Electronics Co., Ltd.
Device No：DTT-012-079
Parameter
Symbol
V
BV
BV
I
λ
I
C(ON)
http:\\www.everlight.com
λ
CE(sat)
Prepared date：07-20-2005
CEO
t
t
CEO
ECO
r
f
0.5
P
Ee=1m W/cm
Ee=1mW /cm
Ee=0mW/cm
Ee=0mW/cm
Ee=0mW/cm
I
R
Condition
C
V
I
I
V
V
I
L
=100μA
E
C
C
=1000Ω
CE
=100μA
CE
CE
=2mA
=1mA
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=20V
=5V
=5V
2
2
2
2
2
Min
730
0.3
---
30
---
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Rev 2
Prepared by：Jaine Tsai
5
Typ
1.14
940
PT12-21B/TR8
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15
15
Max
1100
100
Page: 3 of 10
0.4
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Unit
μS
mA
nm
nm
nA
V
V
V